2SA1015(L) is a silicon PNP epitaxial transistor suitable for audio frequency amplifier and low noise amplifier applications. It has high voltage and high current capabilities, excellent hFE linearity, and low noise characteristics.
The 2SA1015(L) is a silicon PNP epitaxial transistor designed for audio‑frequency and low‑noise amplifier applications. It offers high voltage and current capability with good hFE linearity and low noise performance.
The document lists the device's maximum ratings, detailed electrical characteristics, and handling guidelines, helping designers ensure safe and reliable use in a variety of electronic equipment. This manual is written in Chinese.
| Collector‑Emitter Voltage (VCEO) | -50 V (min) |
|---|---|
| Collector Current (IC) | -150 mA (max) |
| Junction Temperature (Tj) | 125 °C |
| Package Type | JEDEC TO-92 |
The device is rated for a collector‑emitter voltage of -50 V (minimum rating).
It is supplied in a JEDEC TO‑92 package.