1SS362FV is a high-speed switching diode from Toshiba. It features a small size, good forward characteristics, a short reverse recovery time, and a small inter-terminal capacitance.
The 1SS362FV is a silicon epitaxial planar diode designed for ultra‑high speed switching applications. It features low forward voltage, short reverse recovery time, and low junction capacitance, making it suitable for fast switching circuits.
Key specifications include a reverse voltage rating of 85 V, typical forward voltage of 0.63 V at 1 mA, 0.75 V at 10 mA, and a reverse recovery time as short as 1.6 ns. The device is rated for a junction temperature up to 150 °C and can be stored between –55 °C and 150 °C. Reliability guidelines and handling notes are also provided. This manual is written in Japanese.
| Forward voltage (VF) at IF=1 mA | 0.63 V |
|---|---|
| Forward voltage (VF) at IF=10 mA | 0.75 V |
| Forward voltage (VF) at IF=100 mA | 0.97 V (typ) / 1.20 V (max) |
| Reverse voltage (VRM) | 85 V |
| Forward current (IFM) | 300 mA |
| Average current (Io) | 100 mA |
| Reverse recovery time (trr) | 1.6 ns typical, 4.0 ns max (IF=10 mA) |
| Junction capacitance (Cj) | 0.9 pF @ 1 MHz |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to 150 °C |
The diode is rated for a reverse voltage of 85 V.
At a forward current of 10 mA, the typical forward voltage is 0.75 V.
The reverse recovery time is typically 1.6 ns and can be up to 4.0 ns at 10 mA.
The junction temperature must not exceed 150 °C, and the device can be stored between –55 °C and 150 °C.