This datasheet details the Toshiba 1SS362, a silicon epitaxial planar diode designed for ultra high speed switching applications. It features a low forward voltage of 0.97V (typical) and fast reverse recovery time of 1.6ns (typical). The diode is packaged in a small form factor with total capacitance of 0.5pF (typical). Maximum ratings include 85V reverse voltage, 240mA peak forward current, and 125°C junction temperature. Electrical characteristics are provided for operating at 25°C, including forward voltage curves and reverse recovery time data.
| Forward Voltage (100mA) | 0.97 V |
|---|---|
| Reverse Recovery Time | 1.6 ns |
| Total Capacitance | 0.5 pF |
| Maximum Reverse Voltage | 85 V |
| Average Forward Current | 80 mA |
0.97V (typical).
1.6ns (typical).
85V.
80mA.