Key facts
- Brand
- STMicroelectronics
- Model
- DB-900-60W
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-06
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STMicroelectronics DB-900-60W RF Power Amplifier Datasheet
Datasheet 4 pages · 631 KB · EN
The DB-900-60W is a common source N-Channel enhancement-mode lateral MOSFET RF power amplifier designed for IS-54/-136 and IS-95 base station applications. It is designed in cooperation with Européenne de Télécommunications S.A. for high gain and broadband performance operating in common source mode at 26 V.
Read onlineSTMicroelectronics DB-900-60W specifications
| Supply Voltage | 32 V |
|---|---|
| Drain Current | 8 A |
| Power Dissipation | 95 W |
| Operating Case Temperature | -20 to +85 °C |
| Max. Ambient Temperature | +55 °C |
| Frequency Range | 869 - 894 MHz |
| Power Output | 60 W |
| Gain | 13 dB |
| Load Mismatch | 10:1 |
| Harmonic | -30 dBc |
| Dimensions | L=60 mm W=30 mm H=10 mm |
Source: STMicroelectronics DB-900-60W RF Power Amplifier Datasheet
All STMicroelectronics DB-900-60W documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the supply voltage for the DB-900-60W?
The supply voltage is 32 V.
From: STMicroelectronics DB-900-60W RF Power Amplifier Datasheet
What is the operating case temperature range?
The operating case temperature range is -20 to +85 °C.
From: STMicroelectronics DB-900-60W RF Power Amplifier Datasheet