Key facts
- Brand
- Panasonic
- Model
- 2SK656
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
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Panasonic 2SK0656(2SK656) handbook
The Panasonic 2SK0656 (also listed as 2SK656) is a small‑signal N‑channel MOSFET designed for high‑speed switching applications. The datasheet provides key electrical parameters, maximum ratings, and characteristic curves to aid designers in selecting and using the device.
In addition to the electrical data, the document includes export control notices, usage guidelines, and legal statements regarding the accuracy and liability of the information provided.
Panasonic 2SK656 specifications
| Drain‑to‑Source breakdown voltage (VDS) | 50 V |
|---|---|
| Gate‑to‑Source voltage (VGS) | 8 V |
| Drain current (ID) at 10 V | 100 mA |
| Maximum drain current (IDmax) | 200 mA |
| Allowable power dissipation (PD) | 200 mW |
| Storage temperature range | -55 °C to +150 °C |
All Panasonic 2SK656 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain current for the 2SK0656?
The maximum drain current is 200 mA.
What is the breakdown voltage of the 2SK0656 MOSFET?
The drain‑to‑source breakdown voltage is 50 V.
What is the maximum drain current for the 2SK0656?
The maximum drain current is 200 mA.
From: Panasonic 2SK0656 (2SK656) Silicon N-Channel MOS FET handbook
What is the breakdown voltage of the 2SK0656 MOSFET?
The breakdown voltage is 50 V.
From: Panasonic 2SK0656 (2SK656) Silicon N-Channel MOS FET handbook