Key facts
- Brand
- Panasonic
- Model
- 2SK123
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
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Panasonic 2SK123 Silicon N-Channel Junction FET Datasheet
The 2SK123 is a small‑signal silicon N‑channel junction FET intended for low‑frequency impedance conversion and electret capacitor microphone applications. The datasheet provides the device's key electrical parameters, maximum ratings, and operating temperature ranges.
Key specifications include a 20 V drain‑to‑source voltage, 2 mA drain current, 200 mW power dissipation, and operation from –20 °C to +80 °C ambient temperature. Electrical characteristics such as current consumption, cut‑off current, mutual conductance and voltage gain are also listed.
Panasonic 2SK123 specifications
| Drain to Source Voltage (Vdss) | 20 V |
|---|---|
| Drain to Gate Voltage (Vdsg) | 20 V |
| Drain to Source Current (Idss) | 2 mA |
| Drain to Gate Current (Idsg) | 2 mA |
| Gate to Source Current (Igs) | 2 mA |
| Allowable Power Dissipation (Pd) | 200 mW |
| Operating Ambient Temperature | -20 °C to +80 °C |
| Storage Temperature | -55 °C to +150 °C |
| Voltage Gain (Gv) | 0 – 33 dB |
Source: Panasonic 2SK123 Silicon N-Channel Junction FET Datasheet
All Panasonic 2SK123 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑to‑source voltage?
The device can withstand up to 20 V drain‑to‑source voltage.
From: Panasonic 2SK123 Silicon N-Channel Junction FET Datasheet
What is the allowable power dissipation?
The allowable power dissipation is 200 mW.
From: Panasonic 2SK123 Silicon N-Channel Junction FET Datasheet
What package does the 2SK0123 use?
It uses the Mini3‑G1 surface‑mount package.
What marking symbol is printed on the 2SK0123?
The marking symbol is 1H.