2SK0656 (2SK656) is a silicon N-channel MOS FET from Toshiba. It is mainly used for switching circuits. The device features high switching speed, low drive current and high electrostatic breakdown voltage.
The Panasonic 2SK0656 is a small‑signal silicon N‑channel MOSFET designed for high‑speed switching with low drive current. Key features include a high electrostatic breakdown voltage, low input leakage, and a maximum drain current of 200 mA.
The document provides absolute maximum ratings, detailed electrical characteristics such as breakdown voltage, gate‑source voltage, on‑resistance, capacitances, and turn‑on/off times, as well as storage and operating temperature limits. Legal and export notices are also included.
| Drain to Source breakdown voltage (V_DSS) | 50 V |
|---|---|
| Gate to Source voltage (V_GS) | 8 V |
| Maximum drain current (I_Dmax) | 200 mA |
| Drain current (I_D) | 100 mA |
| Allowable power dissipation (P_D) | 200 mW |
| Storage temperature range | -55 °C to +150 °C |
| Channel temperature (Tj) | 150 °C |
| Input capacitance (C_iss) | 9 pF |
The maximum drain current is 200 mA.
The breakdown voltage is 50 V.
It can be stored from –55 °C to +150 °C.
The recommended gate‑source voltage is 8 V.