2SK0656 (2SK656) is a N-channel MOSFET transistor produced by Toshiba. Its features are high switching speed, low drive current and high electrostatic breakdown voltage.
The Panasonic 2SK0656 (also listed as 2SK656) is a small‑signal N‑channel MOSFET designed for high‑speed switching applications. The datasheet provides key electrical parameters, maximum ratings, and characteristic curves to aid designers in selecting and using the device.
In addition to the electrical data, the document includes export control notices, usage guidelines, and legal statements regarding the accuracy and liability of the information provided.
| Drain‑to‑Source breakdown voltage (VDS) | 50 V |
|---|---|
| Gate‑to‑Source voltage (VGS) | 8 V |
| Drain current (ID) at 10 V | 100 mA |
| Maximum drain current (IDmax) | 200 mA |
| Allowable power dissipation (PD) | 200 mW |
| Storage temperature range | -55 °C to +150 °C |
The maximum drain current is 200 mA.
The drain‑to‑source breakdown voltage is 50 V.
It can be stored from –55 °C up to +150 °C.