Key facts
- Brand
- Panasonic
- Model
- 2SK0665
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
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Panasonic 2SK0665 (2SK665) handbook
The 2SK0665 is a small‑signal N‑channel MOSFET from Panasonic, designed for high‑speed switching with a low drive current and high electrostatic breakdown voltage. Key features include high‑speed switching, small drive current, and a high breakdown voltage.
The datasheet lists absolute maximum ratings such as a 20 V drain‑to‑source voltage, 8 V gate‑to‑source voltage, 200 mA maximum drain current, and 150 mW power dissipation. It also provides typical electrical characteristics, recommended operating conditions, and precautions for use in standard electronic equipment.
Panasonic 2SK0665 specifications
| Drain to Source Voltage (VDS) | 20 V |
|---|---|
| Gate to Source Voltage (VGS) | 8 V |
| Drain Current (ID) | 100 mA |
| Maximum Drain Current (IDmax) | 200 mA |
| Power Dissipation (PD) | 150 mW |
| Storage Temperature | -55 °C to +150 °C |
All Panasonic 2SK0665 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain current for the 2SK0665?
The maximum drain current is 200 mA.
What storage temperature range is recommended?
The device can be stored from –55 °C to +150 °C.
What is the maximum drain‑to‑source voltage for the 2SK0665?
The maximum drain‑to‑source voltage is 20 V.
What are the storage temperature limits for the 2SK0665?
The device can be stored from –55 °C up to +150 °C.