2SK123 is an N-channel junction FET produced by Toshiba Corporation. It is mainly used for low-frequency impedance conversion and capacitor microphone
The 2SK123 is a small‑signal silicon N‑channel junction FET intended for low‑frequency impedance conversion and electret capacitor microphone applications. The datasheet provides the device's key electrical parameters, maximum ratings, and operating temperature ranges.
Key specifications include a 20 V drain‑to‑source voltage, 2 mA drain current, 200 mW power dissipation, and operation from –20 °C to +80 °C ambient temperature. Electrical characteristics such as current consumption, cut‑off current, mutual conductance and voltage gain are also listed.
| Drain to Source Voltage (Vdss) | 20 V |
|---|---|
| Drain to Gate Voltage (Vdsg) | 20 V |
| Drain to Source Current (Idss) | 2 mA |
| Drain to Gate Current (Idsg) | 2 mA |
| Gate to Source Current (Igs) | 2 mA |
| Allowable Power Dissipation (Pd) | 200 mW |
| Operating Ambient Temperature | -20 °C to +80 °C |
| Storage Temperature | -55 °C to +150 °C |
| Voltage Gain (Gv) | 0 – 33 dB |
The device can withstand up to 20 V drain‑to‑source voltage.
The allowable power dissipation is 200 mW.
It operates from –20 °C to +80 °C ambient temperature.