This document describes the features and characteristics of the SJF00005BED silicon junction FETs (small signal) 2SK0123 (2SK123), which are used for impedance conversion in low frequency and electret capacitor microphones. It has high mutual conductance and low noise voltage.
The 2SK0123 (also listed as 2SK123) is an N‑channel silicon junction FET intended for impedance conversion in low‑frequency circuits and electret capacitor microphones. The datasheet provides absolute maximum ratings, electrical characteristics, and typical performance curves.
Key information includes a maximum drain‑to‑source voltage of 20 V, a typical mutual conductance of 2 mS, and the Mini3‑G1 surface‑mount package. The document also contains notes on usage, export regulations, and recommended design practices.
| Package Type | Mini3‑G1 |
|---|
It uses the Mini3‑G1 surface‑mount package.
The marking symbol is 1H.