2SK0665 is a small signal N-channel MOSFET produced by Toshiba. It has the characteristics of high switching speed, low drive current and high electrostatic breakdown voltage.
The 2SK0665 is a small‑signal N‑channel MOSFET offered by Panasonic. It features high‑speed switching, low drive current due to high input impedance, and a high electrostatic breakdown voltage. The device is supplied in a SC‑70 (Mini‑3) package and is intended for standard electronic equipment such as office, communications, measuring instruments and household appliances.
The datasheet provides absolute maximum ratings, electrical characteristics, and recommended operating conditions. It also includes export‑control notices, usage precautions, and guidance for ensuring reliable operation within the specified limits.
| Drain‑to‑Source Voltage (VDS) | 20 V |
|---|---|
| Gate‑to‑Source Voltage (VGS) | 8 V |
| Drain Current (ID) | 100 mA |
| Maximum Drain Current (IDmax) | 200 mA |
| Power Dissipation (PD) | 150 mW |
| Storage Temperature | -55 °C to +150 °C |
| Channel Temperature (TC) | 150 °C |
| Gate Threshold Voltage (VGS(th)) | 1.5 V to 3.5 V |
The maximum drain‑to‑source voltage is 20 V.
The device can be stored from –55 °C up to +150 °C.
The allowable power dissipation is 150 mW.