2SK0665(2SK665) is a high performance small signal N-channel MOSFET produced by Fujistu. It features high switching speed, high input impedance and high electrostatic breakdown voltage. This datasheet provides detailed information on the characteristics of this device, for reference by design engineers.
The 2SK0665 is a small‑signal N‑channel MOSFET from Panasonic, designed for high‑speed switching with a low drive current and high electrostatic breakdown voltage. Key features include high‑speed switching, small drive current, and a high breakdown voltage.
The datasheet lists absolute maximum ratings such as a 20 V drain‑to‑source voltage, 8 V gate‑to‑source voltage, 200 mA maximum drain current, and 150 mW power dissipation. It also provides typical electrical characteristics, recommended operating conditions, and precautions for use in standard electronic equipment.
| Drain to Source Voltage (VDS) | 20 V |
|---|---|
| Gate to Source Voltage (VGS) | 8 V |
| Drain Current (ID) | 100 mA |
| Maximum Drain Current (IDmax) | 200 mA |
| Power Dissipation (PD) | 150 mW |
| Storage Temperature | -55 °C to +150 °C |
The maximum drain current is 200 mA.
The device can be stored from –55 °C to +150 °C.
It offers high‑speed switching, small drive current, and a high electrostatic breakdown voltage.
It is intended for standard applications such as office equipment, communications equipment, measuring instruments, and household appliances.