Mitsubishi M5M5256DP Manuals

The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface. Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available, M5M5256DVP(normal lead bend type package), M5M5256DRV(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

This is a document about MITSUBISHI LSIs 262144-BIT CMOS STATIC RAM. The RAM has 262,144 bits, organized as 32,768 words by 8 bits, and is fabricated using high-performance 3 polysilicon CMOS technology. It features a single +5V power supply, no clocks, no refresh, directly TTL compatible inputs and outputs, three-state outputs, and more. Additionally, it has battery backup capability and low standby current.

This document describes the features and characteristics of the MITSUBISHI LSIs 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM. The product is a 262,144-bit CMOS static RAM, fabricated using high-performance 3 polysilicon CMOS technology. It offers high density and low power static RAM. It is ideal for memory systems that require a simple interface. The M5M5256DVP and M5M5256DRV models are packaged in a 28-pin thin small outline package, making it easy to design a printed circuit board.