Key facts
- Brand
- Mitsubishi
- Model
- RD01MUS2
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-03-21
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MITSUBISHI RD01MUS2 Manual
The RDO1MUS2 is a silicon RF power MOSFET designed for VHF/UHF RF amplifier applications. It features an internal monolithic Zener diode for ESD protection and is RoHS compliant. The device is intended for use in high‑power output stages of mobile radio sets and other RF equipment.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, S‑parameter data, and detailed safety precautions for handling and circuit design. Users are advised to follow the listed precautions to avoid overheating, fire hazards, and ESD damage.
Mitsubishi RD01MUS2 specifications
| Drain Current (ID) | 600 mA |
|---|---|
| Storage Temperature (Tstg) | -40 °C to +125 °C |
| Thermal Resistance (Rth j‑c) | 34.5 °C/W |
Source: MITSUBISHI RD01MUS2 Manual
All Mitsubishi RD01MUS2 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain current for the RDO1MUS2?
The maximum drain current is specified as 600 mA.
Is the RDO1MUS2 RoHS compliant?
Yes, the RDO1MUS2 is listed as RoHS compliant.
What frequency range is covered in the RF characteristics?
The measurements cover 135 MHz to 175 MHz.
From: MITSUBISHI ELECTRIC RD01MUS2 RD07MUS2B RF characteristics data at135 to 175MHz. (Vdd=7.2V) Manual
What supply voltage was used for the measurements?
The supply voltage was Vdd = 7.2 V.
From: MITSUBISHI ELECTRIC RD01MUS2 RD07MUS2B RF characteristics data at135 to 175MHz. (Vdd=7.2V) Manual