Key facts
- Brand
- Mitsubishi
- Model
- RD01MUS1
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN · ZH
- Last added
- 2012-03-21
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MITSUBISHI RD01MUS1 Manual
The RDO1MUS1 is a silicon RF power MOSFET designed for VHF/UHF RF amplifier applications. It operates at 520 MHz with a typical output power of up to 1 W and offers high gain and efficiency. The document provides detailed electrical characteristics, absolute maximum ratings, and typical performance curves.
Safety and handling instructions are included, emphasizing heat management, ESD protection, and compliance with RoHS. Users are advised to follow the precautionary guidelines and consult formal specification sheets for detailed design information.
Mitsubishi RD01MUS1 specifications
| Drain‑to‑source voltage (V_DSS) | 30 V |
|---|---|
| Gate‑to‑source voltage (V_GS) | ±10 V |
| Channel dissipation (P_ch) | 3.6 W |
| Drain current (I_D) | 600 mA |
| Storage temperature range | -40 °C to +125 °C |
| Thermal resistance (Rθ_J‑C) | 345 °C/W |
Source: MITSUBISHI RD01MUS1 Manual
All Mitsubishi RD01MUS1 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain current for the RDO1MUS1?
The maximum drain current is specified as 600 mA.
What supply voltage was used for the measurements?
All measurements were performed with Vdd = 7.2 V.
What is the output power of RD01MUS1 at 763 MHz?
RD01MUS1 delivers an output power of 5 W at 763 MHz.