This document describes the features and characteristics of the MITSUBISHI LSIs 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM. The product is a 262,144-bit CMOS static RAM, fabricated using high-performance 3 polysilicon CMOS technology. It offers high density and low power static RAM. It is ideal for memory systems that require a simple interface. The M5M5256DVP and M5M5256DRV models are packaged in a 28-pin thin small outline package, making it easy to design a printed circuit board.
The M5M5256DP, FP, VP and RV devices are 262,144‑bit CMOS static RAMs organized as 32,768 words by 8 bits. They are fabricated with high‑performance polysilicon CMOS technology, providing high density, low power consumption and battery‑back‑up capability. Variants are available in several speed grades (45 ns, 55 ns, 70 ns) and in both lead‑bend and reverse‑lead‑bend packages, making PCB design straightforward.
Typical specifications include a supply voltage range of –0.3 V to 7.0 V, operating temperature from 0 °C to 70 °C, power dissipation up to 700 mW, and input/output capacitances of 6 pF and 8 pF respectively. The device requires a single +5 V supply, has no internal clock or refresh, and features TTL‑compatible three‑state outputs suitable for OR‑tie bus configurations.
| Memory size | 262,144 bits |
|---|---|
| Organization | 32,768 words × 8 bits |
| Access time (‑45LL) | 45 ns |
| Supply voltage range | -0.3 V to 7.0 V |
| Operating temperature | 0 °C to 70 °C |
| Package (DP version) | 28‑pin 600 mil DIP |
| Package (FP version) | 28‑pin 450 mil SOP |
The device can operate up to 70 °C.
No, the device operates without clocks or refresh.
The typical supply voltage is 5 V (±10%).