Key facts
- Brand
- Mitsubishi
- Model
- RDO1MUS2
- Category
- Other Electronics
- Industry
- Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-03-21
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MITSUBISHI ELECTRIC AN-UHF-097-C Manual
This application note from Mitsubishi Electric presents measured RF performance data for the silicon power devices RDO1MUS2 and RDO7MUS2B. The data cover frequency response, output power versus input power, output power versus gate voltage, and output power versus supply voltage over the 380 MHz‑470 MHz band.
The measurements were performed with a supply voltage (Vdd) of 7.2 V, a gate bias (Vgg) of 3.5 V, and an input power of 30 mW (14.77 dBm). Results are shown in tables and graphs for each parameter, and an equivalent circuit model is provided on the final pages.
Mitsubishi RDO1MUS2 specifications
| Frequency range | 380 MHz – 470 MHz |
|---|---|
| Supply voltage (Vdd) | 7.2 V |
| Gate voltage (Vgg) | 3.5 V |
| Input power (Pi) | 30 mW (14.77 dBm) |
All Mitsubishi RDO1MUS2 documents by type
How to use the product for one specific task, with worked examples.
Questions answered in these manuals
What devices are covered in this application note?
The note provides data for the RDO1MUS2 and RDO7MUS2B silicon RF power devices.
What supply voltage was used for the measurements?
All measurements were performed with a supply voltage of 7.2 V.
What frequency range was tested for the RDO1MUS2 amplifier?
The amplifier was evaluated from 450 MHz to 527 MHz.
From: Mitsubishi Electric RDO1MUS2 Application Note AN-UHF-087-A
What supply voltage and bias current were used in the measurements?
A drain‑source voltage of 7.2 V and a quiescent drain current of 50 mA were used.
From: Mitsubishi Electric RDO1MUS2 Application Note AN-UHF-087-A