Mitsubishi RA60H4452M1 Manuals

ManualLib has 2 documents for the Mitsubishi RA60H4452M1 (electronic components): 1 datasheet, 1 application note. Every file can be read online or downloaded as a PDF for free.

Datasheet 1Application Note 1

Key facts

Model
RA60H4452M1
Industry
Electronics
Documents
2
Languages
EN
Last added
2012-03-21

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Mitsubishi Electric RA60H4452M1 RF Power Module Datasheet

Mitsubishi Electric RA60H4452M1 RF Power Module Datasheet

Datasheet 9 pages · 237 KB · EN

The RA60H4452M1 is a 60‑watt RF MOSFET power‑amplifier module designed for 12.5‑V mobile radios operating in the 440‑520 MHz band. It can be driven directly from a battery, with output power controlled by the gate voltage.

Key features include enhancement‑mode MOSFET transistors, a metal‑shielded package (67 × 19.4 × 9.9 mm), low‑power gate control (≈5 mA at 5 V), and RoHS compliance. The document details electrical ratings, typical performance curves, mounting recommendations, and safety precautions for reliable operation.

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Mitsubishi RA60H4452M1 specifications

Frequency Range440‑520 MHz
Output Power60 W
Gate Voltage (typical)5 V
Module Size67 × 19.4 × 9.9 mm
Total Efficiency40 %
Operating Temperature Range-30 °C to +100 °C
Storage Temperature Range-40 °C to +110 °C

Source: Mitsubishi Electric RA60H4452M1 RF Power Module Datasheet

All Mitsubishi RA60H4452M1 documents by type

Datasheet 1

Ratings, dimensions and ordering codes, for selection and design work.

Application Note 1

How to use the product for one specific task, with worked examples.

Questions answered in these manuals

What gate voltage is needed to obtain the nominal 60 W output?

A gate voltage of about 4 V (typical) to 5 V (maximum) provides the nominal 60 W output power.

From: Mitsubishi Electric RA60H4452M1 RF Power Module Datasheet

What is the ESD sensitivity of the RA60H4452M1?

The module is sensitive to ESD voltages down to 1000 V, so appropriate ESD precautions are required.

From: Mitsubishi Electric RA60H4452M1 RF Power Module Datasheet

What type of devices are used in RA60H4452M1 and RA60H4047M1?

Both parts use MOS‑FET devices.

From: MITSUBISHI ELECTRIC AN-UHF-078-B Manual

Why are MOS‑FET devices more vulnerable to static electricity?

MOS‑FET devices have lower surge endurance than silicon bipolar devices, so static discharge can cause burn‑out.

From: MITSUBISHI ELECTRIC AN-UHF-078-B Manual