The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface. Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available, M5M5256DVP(normal lead bend type package), M5M5256DRV(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.
This document describes the M5M5256DP, KP, FP, VP, and RV series of 262,144-bit (32,768-word by 8-bit) CMOS static RAMs. These devices are fabricated using high-performance 3 polysilicon CMOS technology with resistive load NMOS cells to achieve high density and low power consumption.
The datasheet provides detailed electrical characteristics, timing diagrams, and pin configurations for various speed grades (45ns, 55ns, 70ns) and package types including DIP, SOP, and TSOP. Key features include single +5V power supply operation, no clocks or refresh required, direct TTL compatibility, and battery backup capability with a stand-by current as low as 0.05uA.
| Capacity | 262,144-bit (32,768-word by 8-bit) |
|---|---|
| Technology | 3 polysilicon CMOS |
| Power Supply Voltage | +5V |
| Stand-by Current (XL) | 0.05uA typ. |
| Operating Temperature | -20~70 °C |
The device is organized as 32,768-words by 8-bits.
No, it operates with no clocks and no refresh required.
Yes, the M5M5256DVP and RV are packaged in a 28-pin thin small outline package.