Key facts
- Brand
- Mitsubishi
- Model
- MGF0906B
- Documents
- 2
- Languages
- EN
- Last added
- 2012-03-21
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Mitsubishi Electric MGF0906B High‑Power GaAs FET Datasheet
The MGF0906B is a high‑power GaAs field‑effect transistor with an N‑channel Schottky gate, intended for use in UHF band power amplifiers. It is supplied in a hermetically sealed metal‑ceramic package and is specified for operation around 2.3 GHz.
The datasheet provides absolute maximum ratings, recommended bias conditions, typical electrical characteristics, S‑parameter data and safety notices. It is aimed at designers who need detailed performance parameters for circuit design and simulation.
Mitsubishi MGF0906B specifications
| P1dB | 37.0 dBm @ 2.3 GHz |
|---|---|
| Gate‑to‑Drain Voltage (VGDO) | -15 V |
| Gate‑to‑Source Voltage (VGSO) | -15 V |
| Maximum Drain Current (ID) | 3 A |
Source: Mitsubishi Electric MGF0906B High‑Power GaAs FET Datasheet
All Mitsubishi MGF0906B documents by type
Ratings, dimensions and ordering codes, for selection and design work.
How to use the product for one specific task, with worked examples.
Questions answered in these manuals
What is the maximum drain current rating?
The absolute maximum drain current is 3 A.
From: Mitsubishi Electric MGF0906B High‑Power GaAs FET Datasheet
At what frequency are the key performance figures specified?
Key figures such as P1dB, gain and efficiency are specified at 2.3 GHz.
From: Mitsubishi Electric MGF0906B High‑Power GaAs FET Datasheet
What frequency range does the MGF0906B RF test cover?
The RF test data cover the 2.11 GHz to 2.17 GHz band.
From: MITSUBISHI ELECTRIC SEMICONDUCTOR MGF0906B RF TEST DATA for Freq.=2.11-2.17GHz BAND Manual
What test voltage and current were used for the measurements?
The measurements were performed with a supply voltage of 10 V and a bias current of 1.2 A.
From: MITSUBISHI ELECTRIC SEMICONDUCTOR MGF0906B RF TEST DATA for Freq.=2.11-2.17GHz BAND Manual