MITSUBISHI RD00HVS1 Manual
User Manual
RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. It features high power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz.
Mitsubishi RD00HVS1 manuals
MITSUBISHI ELECTRIC RD00HVS1 RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz Vdd=7.2V (improved stability versions) Manual
User Manual
This document describes the RF performance of RD00HVS1 and RD02MUS1B 2-stage amplifiers at a frequency range of 400-470MHz and Vdd=7.2V. The evaluation conditions include frequency characteristics, Pout vs. Pin characteristics, and small signal S parameters. The document provides typical data for frequency characteristics, Pout vs. Pin characteristics, and small signal S parameters.