Key facts
- Brand
- Mitsubishi
- Model
- RD00HVS1
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-03-21
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MITSUBISHI RD00HVS1 Manual
The RDOOHVS1 is a silicon RF power MOSFET designed for VHF/UHF amplifier applications. It offers a drain‑to‑source voltage of 30 V, typical output power of 0.5 W at 12.5 V supply, and operates around 175 MHz.
The datasheet includes absolute maximum ratings, electrical characteristics, typical performance curves, S‑parameter data, and safety precautions for reliable integration into RF circuits.
Mitsubishi RD00HVS1 specifications
| Drain‑to‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑to‑source voltage (VGS) | ±10 V |
| Channel dissipation (Pch) | 3.1 W |
| Drain current (ID) | 200 mA |
| Storage temperature (Tstg) | -40 °C to +125 °C |
| Thermal resistance (Rth j‑c) | 40 °C/W |
| Typical output power (Pout) | 0.5 W |
Source: MITSUBISHI RD00HVS1 Manual
All Mitsubishi RD00HVS1 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
How to use the product for one specific task, with worked examples.
Questions answered in these manuals
What is the maximum drain‑to‑source voltage for the RDOOHVS1?
The maximum drain‑to‑source voltage is 30 V.
What is the typical output power of the RDOOHVS1 at a 12.5 V supply?
The device typically delivers 0.5 W of output power at VDD = 12.5 V.
What frequency range was tested for the amplifiers?
The amplifiers were evaluated from 400 MHz to 470 MHz.
What supply voltage and bias currents were used during the measurements?
A supply voltage of 7.2 V was applied with Idq1 set to 50 mA and Idq2 set to 200 mA.