Key facts
- Brand
- Mitsubishi
- Model
- MGF0915A
- Documents
- 5
- Languages
- EN
- Last added
- 2012-03-21
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Mitsubishi MGF0915A GaAs FET Datasheet
The MGF0915A is a high‑power GaAs FET designed for use in UHF‑band (L & S band) power amplifiers. It features a Schottky gate, hermetic packaging, and is supplied as a non‑matched SMD device.
The datasheet lists key performance figures such as typical output power of 36.5 dBm at 1.9 GHz, gain of 14.5 dB, and power‑added efficiency of 50 %. It also includes absolute maximum ratings, recommended bias conditions, and S‑parameter data, together with safety and legal notices from Mitsubishi Electric Corporation.
Mitsubishi MGF0915A specifications
| Frequency band | 2.5‑2.7 GHz |
|---|---|
| IDQ (quiescent current) | 0.8 A |
| Board material | FR4, thickness 0.8 mm |
| Dielectric constant | 4.4 |
All Mitsubishi MGF0915A documents by type
Ratings, dimensions and ordering codes, for selection and design work.
How to use the product for one specific task, with worked examples.
Questions answered in these manuals
What frequency range is covered by the MGF0915A data?
The RF characteristics are measured for the 2.5‑2.7 GHz band.
What is the test fixture frequency used for the measurements?
The test fixture operates at 2.6 GHz.
What frequency band does the MGF0915A cover?
The MGF0915A data are provided for the 2.5‑2.7 GHz band.
What are the test conditions for the RF measurements?
Measurements were taken with a supply voltage of 10 V, a quiescent current of 0.8 A, and at a temperature of 25 °C.
What frequency band does the MGF0915A cover?
The device is characterized for the 2.11‑2.17 GHz band.
From: MITSUBISHI ELECTRIC SEMICONDUCTOR MGF0915A RF TEST DATA for Freq.=2.11-2.17GHz BAND Manual
What are the test conditions used for the RF measurements?
Measurements were taken at a drain voltage of 10 V, quiescent current of 0.8 A, and a temperature of 25 °C.
From: MITSUBISHI ELECTRIC SEMICONDUCTOR MGF0915A RF TEST DATA for Freq.=2.11-2.17GHz BAND Manual