Key facts
- Brand
- Mitsubishi
- Model
- RA60H4047M1
- Category
- electronic components
- Industry
- Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-03-21
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Mitsubishi Electric RA60H4047M1 RF Power Module Datasheet
The RA60H4047M1 is a 60‑watt RF MOSFET amplifier module designed for 12.5‑volt mobile radios operating in the 400‑470 MHz band. It features enhancement‑mode MOSFET transistors, a metal‑shielded package, and low‑power gate control (5 mA typical). The module is RoHS compliant and includes detailed electrical characteristics, maximum ratings, and typical performance curves.
The document provides mechanical dimensions, thermal design recommendations, mounting instructions, and safety precautions such as ESD sensitivity (down to 1000 V) and recommended screw torque (4.0‑6.0 kgf‑cm). It also outlines recommended output‑power control methods for both non‑linear FM and linear AM modulation, and gives guidance on avoiding oscillation and overload conditions.
Mitsubishi RA60H4047M1 specifications
| Frequency Range | 400‑470 MHz |
|---|---|
| Output Power | 60 W |
| Supply Voltage | 12.5 V |
| Gate Current (typical) | 5 mA |
| Module Size | 67 × 19.4 × 9.9 mm |
| Total Efficiency (typical) | 40 % |
| Input Power (minimum) | 100 mW |
| Operating Temperature Range | -30 °C to +100 °C |
| Storage Temperature Range | -40 °C to +110 °C |
Source: Mitsubishi Electric RA60H4047M1 RF Power Module Datasheet
All Mitsubishi RA60H4047M1 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
How to use the product for one specific task, with worked examples.
Questions answered in these manuals
What is the ESD sensitivity of the module?
The module is sensitive to ESD voltages down to 1000 V and requires appropriate precautions.
From: Mitsubishi Electric RA60H4047M1 RF Power Module Datasheet
What torque is recommended for the mounting screws?
M3 screws should be tightened to a torque of 4.0 to 6.0 kgf‑cm.
From: Mitsubishi Electric RA60H4047M1 RF Power Module Datasheet
What type of devices are used in RA60H4452M1 and RA60H4047M1?
Both parts use MOS‑FET devices.
Why are MOS‑FET devices more vulnerable to static electricity?
MOS‑FET devices have lower surge endurance than silicon bipolar devices, so static discharge can cause burn‑out.