MITSUBISHI SEMICONDUCTOR MGFC36V4450A Manual
User Manual
The document describes the features and characteristics of the MGFC36V4450A GaAs FET model produced by MITSUBISHI SEMICONDUCTOR. This GaAs FET features a high output power of up to 4W, a power gain of 12dB, a power added efficiency of 32%, and low distortion. The product is suitable for power amplifiers and digital wireless communication applications in the 4.4~5.0 GHz frequency band.
