Key facts
- Brand
- Mitsubishi
- Model
- MGFC36V4450A
- Documents
- 2
- Languages
- EN
- Last added
- 2012-05-08
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Mitsubishi MGFC36V4450A GaAs FET Datasheet
The MGFC36V4450A is a GaAs power FET from Mitsubishi Semiconductor, internally impedance‑matched to a 50 Ω system and intended for 4.4‑5.0 GHz band power amplifiers. Its hermetically sealed metal‑ceramic package provides high reliability and the device offers 4 W output power with a typical linear gain of 12 dB.
The datasheet also lists recommended bias conditions (VDS = 10 V, ID = 1.2 A, RG = 100 Ω) and absolute maximum ratings such as VGDO = ‑15 V, VGSO = 15 V, and a total power dissipation of 25 W. Safety and usage notes advise careful design to avoid breakdowns and to consider application‑specific reliability requirements.
Mitsubishi MGFC36V4450A specifications
| Frequency band | 4.4 ~ 5.0 GHz |
|---|---|
| Output power (P1dB) | 4 W (typ.) |
| Power added efficiency (P.A.E.) | 32 % (typ.) |
| Linear power gain (GLP) | 12 dB (typ.) |
| Gate‑to‑drain voltage (VGDO) | -15 V |
| Storage temperature | -65 °C / +175 °C |
All Mitsubishi MGFC36V4450A documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical power added efficiency of the MGFC36V4450A?
The typical power added efficiency is 32 % at 4.4‑5.0 GHz.
What is the maximum drain current rating?
The maximum drain current is 3.75 A.
What is the typical power added efficiency at 4.4‑5.0 GHz?
Typical PAE is 32 % at 4.4‑5.0 GHz.