Key facts
- Brand
- Mitsubishi
- Model
- MGF1801B
- Category
- Other Electronics
- Industry
- Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-03-21
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Mitsubishi Electric MGF1801B High‑Power GaAs FET Datasheet
The MGF1801B is a medium‑power N‑channel GaAs FET designed for S‑ to X‑band amplifiers and oscillators. The hermetically sealed metal‑ceramic package provides low parasitic losses and is suitable for microstrip circuits.
The document lists electrical characteristics, absolute maximum ratings, typical performance curves and S‑parameter data, together with safety and bias recommendations for designers.
Mitsubishi MGF1801B specifications
| Gate to drain breakdown voltage (Vgdr) | -8 V |
|---|---|
| Gate to source breakdown voltage (Vgsr) | -8 V |
| Gate to source leakage current | 20 µA |
| Saturated drain current (IDss) | 250 mA |
| Gate to source cut‑off voltage (VGS(off)) | 15‑45 V |
| Linear Power Gain (GLP) at 8 GHz | 7‑9 dB |
| Output power at 1 dB gain compression (PidB) at 8 GHz | 21.8‑23 dBm |
| Thermal resistance (RθJC) | 125 °C/W |
Source: Mitsubishi Electric MGF1801B High‑Power GaAs FET Datasheet
All Mitsubishi MGF1801B documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain current rating of the MGF1801B?
The saturated drain current rating is 250 mA.
From: Mitsubishi Electric MGF1801B High‑Power GaAs FET Datasheet
What is the linear power gain of the MGF1801B at 8 GHz?
The linear power gain is between 7 dB and 9 dB.
From: Mitsubishi Electric MGF1801B High‑Power GaAs FET Datasheet
What is the recommended bias condition for the MGF1801BT?
The recommended bias is VDS = 6 V with a drain current of 100 mA.
What is the maximum drain current rating?
The device can handle a maximum drain current of 250 mA.