Key facts
- Brand
- Mitsubishi
- Model
- RA30H4552M1
- Category
- MOS transistor
- Industry
- Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-03-21
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Mitsubishi Electric RA30H4552M1 RF Power Module Datasheet
The RA30H4552M1 is a 30 W silicon RF power module designed for 12.5 V mobile radios operating in the 450‑520 MHz band. It uses enhancement‑mode MOSFET transistors and offers low‑power control current (Ieg≈1 mA) for both non‑linear FM and linear AM modulation.
The datasheet lists maximum ratings, electrical characteristics, typical performance curves, and mechanical dimensions (67 × 19.4 × 9.9 mm). Recommended mounting includes M3 screws tightened to 4.0‑6.0 kgf‑cm and an athermal compound between the module and heat sink. The module is RoHS compliant and includes safety and ESD precautions.
Mitsubishi RA30H4552M1 specifications
| Frequency Range | 450‑520 MHz |
|---|---|
| Output Power | 30 W |
| Total Efficiency | 42 % |
| Gate Current (typical) | 1 mA |
| Module Size | 67 × 19.4 × 9.9 mm |
| Low‑Power Control Current | 1 mA (typ) @ Vaq=5 V |
Source: Mitsubishi Electric RA30H4552M1 RF Power Module Datasheet
All Mitsubishi RA30H4552M1 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
How to use the product for one specific task, with worked examples.
Questions answered in these manuals
What mounting torque is recommended for the screws?
M3 screws should be tightened to a torque of 4.0 to 6.0 kgf‑cm.
From: Mitsubishi Electric RA30H4552M1 RF Power Module Datasheet
Is the RA30H4552M1 module RoHS compliant?
Yes, the RA30H4552M1 is a RoHS compliant product.
From: Mitsubishi Electric RA30H4552M1 RF Power Module Datasheet
What type of semiconductor devices are RA30H4552M1 and RA30H4047M1?
Both devices are MOS FET silicon RF power semiconductors.
What are the electro‑static discharge test conditions used in the note?
The test used a 100 pF capacitor, 1.5 kΩ resistor, three discharges per voltage step, and increased the voltage up to 6000 V.