Key facts
- Brand
- Mitsubishi
- Model
- RA45H7687M1
- Category
- Other Electronics
- Industry
- Electronics
- Documents
- 3
- Languages
- EN
- Last added
- 2012-03-21
Start here
Mitsubishi Electric RA45H7687M1 Datasheet
The RA45H7687M1 is a two‑stage silicon RF MOSFET power amplifier module designed for mobile radios that require 45 W output at 12.8 V supply. It operates in the 763‑870 MHz band and features enhancement‑mode MOSFET transistors, a metal cap for improved RF radiation, and low‑power control currents.
The data sheet provides maximum ratings, electrical characteristics, typical performance curves, mechanical dimensions, mounting recommendations, and safety precautions. It also includes RoHS compliance information and guidelines for ESD protection, heat‑sink attachment, and soldering procedures.
Mitsubishi RA45H7687M1 specifications
| Output Power (typical) | 45 W |
|---|---|
| Frequency Range | 763 – 870 MHz |
| Supply Voltage | 12.8 V |
| Gate Voltage 1 | 3.4 V |
| Gate Voltage 2 (max) | 5 V |
| Total Efficiency (typical) | 33 % |
| Module Size | 67 × 19.4 × 9.9 mm |
| Input Power (minimum) | 100 mW |
| Load VSWR (max) | 3:1 |
| Operating Temperature Range (case) | -30 °C to +100 °C |
All Mitsubishi RA45H7687M1 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
How to use the product for one specific task, with worked examples.
Questions answered in these manuals
How should the module be mounted to a heat sink?
Mount the module with M3 screws tightened to 4.0–6.0 kgf·cm and use an athermal compound for low thermal resistance.
Is the RA45H7687M1 RoHS compliant?
Yes, the module is RoHS compliant; compliance is indicated by the letter “G” after the lot marking.
What internal resistor value is recommended for the RA45H7687M1?
The recommended internal resistor value is 15 kΩ.
What supply voltage must be applied between Vgc and ground?
A DC voltage of 3.4 V (±7 %) is required between Vgc and ground.