Key facts
- Brand
- Mitsubishi
- Model
- MGFS48V2527
- Documents
- 2
- Languages
- EN
- Last added
- 2012-05-07
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Mitsubishi MGFS48V2527 GaAs FET Datasheet
Datasheet 6 pages · 439 KB · EN
The MGFS48V2527 is a GaAs power FET from Mitsubishi Semiconductor, designed for push‑pull 2.5‑2.7 GHz band amplifiers delivering up to 60 W output.
The datasheet provides electrical characteristics, recommended bias conditions, S‑parameter data and safety guidelines for reliable integration.
Mitsubishi MGFS48V2527 specifications
| Frequency band | 2.5 - 2.7 GHz |
|---|---|
| Typical output power | 60 W (typ.) at 2.5‑2.7 GHz |
| Typical gain | 10 dB (typ.) |
| Typical power added efficiency | 45 % (typ.) |
| Recommended VDS | 12 V |
| Recommended gate resistance | 20 Ω per gate |
| Thermal resistance (channel‑to‑case) | 1.0 °C·W⁻¹ (typ.) |
| Storage temperature range | -65 °C to +175 °C |
All Mitsubishi MGFS48V2527 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical output power of the MGFS48V2527?
The MGFS48V2527 delivers a typical output power of 60 W at 2.5‑2.7 GHz.
What bias conditions are recommended for the MGFS48V2527?
Recommended bias is VDS = 12 V, ID = 4.0 A, with a gate resistance of 20 Ω per gate.
What frequency range is the MGFS48V2527 designed for?
It is designed for the 2.5‑2.7 GHz band.
What is the typical power added efficiency of the MGFS48V2527?
The typical power added efficiency is 45 %.