This is a document about MITSUBISHI LSIs 262144-BIT CMOS STATIC RAM. The RAM has 262,144 bits, organized as 32,768 words by 8 bits, and is fabricated using high-performance 3 polysilicon CMOS technology. It features a single +5V power supply, no clocks, no refresh, directly TTL compatible inputs and outputs, three-state outputs, and more. Additionally, it has battery backup capability and low standby current.
This document is a technical datasheet for the Mitsubishi Electric M5M5256DP,KP,FP,VP,RV family of CMOS static random access memory (RAM) devices. These chips are organized as 32,768-words by 8-bits and utilize high-performance 3 polysilicon CMOS technology to achieve high density and low power consumption.
| Memory Organization | 32,768-words by 8-bits |
|---|---|
| Technology | 3 polysilicon CMOS |
| Access Time (LL) | 45ns, 55ns, or 70ns |
| Access Time (XL) | 45ns, 55ns, or 70ns |
| Supply Voltage (Active) | +5V |
| Storage Temperature | -65 to 150 °C |
The device has a total capacity of 262,144 bits.
No, the device operates without clocks and does not require refresh.