Key facts
- Brand
- Mitsubishi
- Model
- MGFC45V5964A
- Documents
- 2
- Languages
- EN
- Last added
- 2012-05-09
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Mitsubishi Electric MGFC45V5964A GaAs FET Datasheet
The MGFC45V5964A is a hermetically sealed, metal‑ceramic GaAs power FET designed for use in 5.9‑6.4 GHz band amplifiers. It is internally impedance‑matched to a 50 Ω system, providing high output power, gain and efficiency.
Key specifications include a typical P1dB of 32 W, linear gain of 9 dB, and power‑added efficiency of 33 % across the band. Absolute maximum ratings list a drain voltage of –15 V, drain current of 30 A, and total power dissipation of 125 W. Recommended bias conditions are Vgs = 10 V, Id = 8 A with a 25 Ω gate resistor.
Mitsubishi MGFC45V5964A specifications
| Frequency band | 5.9‑6.4 GHz |
|---|---|
| P1dB (typical output power) | 32 W @ 5.9‑6.4 GHz |
| Linear gain (GLP) | 9.0 dB @ 5.9‑6.4 GHz |
| Power added efficiency (PAE) | 33 % @ 5.9‑6.4 GHz |
| Third‑order intermodulation (IM3) | -42 dBc (min) @ Po=34.5 dBm |
| Gate‑to‑drain voltage (VGDO) | -15 V |
| Gate‑to‑source voltage (VGSO) | -15 V |
| Drain current (ID) | 30 A |
| Reverse gate current (IGR) | -60 mA |
| Forward gate current (IGF) | 126 mA |
| Total power dissipation (PT) | 125 W |
| Channel temperature (Tch) | 175 °C |
| Storage temperature (Tstg) | -65 °C to 175 °C |
| Transconductance (Gm) | 8 S |
| Gate‑to‑source cut‑off voltage (VGS(off)) | 5 V |
| Recommended bias – Vgs | 10 V |
| Recommended bias – Id | 8 A |
| Recommended bias – Gate resistor (Rg) | 25 Ω |
All Mitsubishi MGFC45V5964A documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical output power (P1dB) of the MGFC45V5964A?
The typical P1dB is 32 W across the 5.9‑6.4 GHz band.
What is the recommended bias condition for the device?
Use Vgs = 10 V, Id = 8 A and a 25 Ω gate resistor.
What is the typical output power of the MGFC45V5964A?
The device delivers a typical output power of 32 W at 5.9 – 6.4 GHz.
From: Mitsubishi Electric MGFC45V5964A C‑Band Power GaAs FET Datasheet
What are the recommended bias conditions?
Recommended bias is VDS = 10 V, ID = 8 A with a gate resistance of 25 Ω.
From: Mitsubishi Electric MGFC45V5964A C‑Band Power GaAs FET Datasheet