Key facts
- Brand
- Mitsubishi
- Model
- RD02MUS1B
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-03-21
Start here
MITSUBISHI RD02MUS1B Manual
The RDO2MUS1B is a silicon RF power MOSFET transistor designed for VHF/UHF RF power amplifier applications, such as mobile radio sets. It offers high power gain (Pout > 2 W, Gp > 16 dB) and typical efficiency of 65 % at 175 MHz and 520 MHz.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, S‑parameter data, and safety precautions. Key parameters include a 30 V drain‑source rating, 1.5 A drain current, and a junction temperature limit of 150 °C. Users are advised to keep the device temperature low, use appropriate heat‑sinks, and follow RoHS and ESD guidelines.
Mitsubishi RD02MUS1B specifications
| Drain‑to‑source voltage (V_DSS) | 30 V |
|---|---|
| Gate‑to‑source voltage (V_GSS) | ±20 V |
| Drain current (I_D) | 1.5 A |
| Junction temperature (Tj) | 150 °C |
| Thermal resistance (Rth_j‑c) | 5.7 °C/W |
| Typical output power at 175 MHz | 2 W |
| Typical efficiency at 175 MHz | 65 % |
Source: MITSUBISHI RD02MUS1B Manual
All Mitsubishi RD02MUS1B documents by type
Ratings, dimensions and ordering codes, for selection and design work.
How to use the product for one specific task, with worked examples.
Questions answered in these manuals
What is the maximum drain‑to‑source voltage of the RDO2MUS1B?
The maximum drain‑to‑source voltage is 30 V.
What is the typical output power at 175 MHz?
The device can deliver about 2 W of output power at 175 MHz.
What frequency range was tested for the amplifiers?
The amplifiers were evaluated from 400 MHz to 470 MHz.
What supply voltage and bias currents were used during the measurements?
A supply voltage of 7.2 V was applied with Idq1 set to 50 mA and Idq2 set to 200 mA.