MITSUBISHI PM100CSE120 handbook(1)
Datasheet
This document describes the features and characteristics of the MITSUBISHI PM100CSE120 FLAT-BASE TYPE INSULATED PACKAGE, released in July 2005. The product adopts a new 4th generation planar IGBT chip, which improves performance through a 1µm fine rule process. It also uses a new diode designed to have soft reverse recovery characteristics. The product is suitable for 3-phase 100A, 1200V current-sense IGBT for 15kHz switching. It features monolithic gate drive and protection logic, as well as detection, protection, and status indication circuits for over-current, short-circuit, over-temperature, and under-voltage. The product is suitable for acoustic noise-less 18.5/22kW class inverter applications.