The FDMC86102L is a N-Channel Power Trench® MOSFET from Fairchild Semiconductor Corporation with a rated voltage of 100V and a rated current of 18A. This product has an ultra-low on-state resistance, a low profile and meets RoHS standards.
This document is a technical datasheet for the Fairchild Semiconductor FDMC86102L, an N-Channel Power Trench MOSFET. The device features a maximum on-state resistance of 23 mΩ at Vgs = 10V and Id = 7A, designed to minimize resistance while maintaining superior switching performance.
| Drain to Source Voltage (Vdss) | 100 V |
|---|---|
| Continuous Drain Current (Package limited) | 18 A |
| Static Drain to Source On Resistance | 23 mΩ |
| Power Dissipation (Ta = 25 °C) | 41 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
The device supports a maximum continuous drain current of 18 A when the case temperature is 25 °C.
The maximum power dissipation is 41 W when the junction temperature is maintained at 25 °C.
The recommended maximum duty cycle for pulse tests is 0.5%.