FDMC86102LZ N-Channel Power Trench® MOSFET is a N-Channel logic Level MOSFET produced by Fairchild Semiconductor Corporation using advanced Power Trench® process. It has excellent switching performance and high ESD protection.
This document is a datasheet for the Fairchild Semiconductor FDMC86102LZ, an N-Channel logic level MOSFET produced using the Power Trench process. The device is designed for DC-DC switching applications and features a gate-to-source zener diode for enhanced ESD protection.
The datasheet provides maximum ratings, electrical characteristics, and typical performance curves. Key specifications include a drain-to-source breakdown voltage of 100V, a continuous drain current of 22A (package limited), and a static drain-to-source on-resistance of 24 mΩ at Vgs = 10V and Id = 6.5A.
The device is intended for DC-DC switching applications.
The maximum continuous drain current is 22 A when the temperature is 25°C.
The operating and storage junction temperature range is from -55 to +150 °C.
The maximum power dissipation is 41 W at a temperature of 25°C.