RN2101~RN2106 are a series of PNP type transistors with built-in bias resistors from TOSHIBA. They are simple to use and have a compact package. They are suitable for applications such as switching power supplies, inverter circuits, interface circuits and driver circuits.
This document provides technical specifications and application information for the Toshiba RN2101~RN2106 series of Silicon PNP Epitaxial Type (PCT Process) transistors. These devices are designed specifically for switching, inverter circuit, interface circuit, and driver circuit applications.
| Collector-base voltage (Vcb) | -50 V |
|---|---|
| Collector-emitter voltage (Vceo) | -50 V |
| Collector current (Ic) | -100 mA |
| Collector power dissipation (Po) | 100 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range (Tstg) | -55~150 °C |
The document lists switching, inverter circuit, interface circuit, and driver circuit applications.
The maximum collector current rating is -100 mA.