Key facts
- Brand
- Siemens
- Model
- BFP 81
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-05
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Siemens BFP 81 NPN Silicon RF Transistor Datasheet
The BFP 81 is an NPN silicon RF transistor designed for low‑noise amplifiers up to 2 GHz, handling collector currents from 0.5 mA to 20 mA. It is supplied in a SOT‑143 package and includes detailed handling precautions for electrostatic discharge.
The document lists maximum ratings such as a 16 V collector‑emitter voltage and 30 mA collector current, as well as AC characteristics like a transition frequency up to 6 GHz. SPICE model parameters and the equivalent circuit are provided for simulation and design work.
Siemens BFP 81 specifications
| Collector‑emitter voltage (VCEO) | 16 V |
|---|---|
| Collector current (Ic) | 30 mA |
| Junction temperature (Tj) | 150 °C |
| Transition frequency (fT) | up to 6 GHz |
All Siemens BFP 81 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑emitter voltage for the BFP 81?
The maximum collector‑emitter voltage is 16 V.
What is the transition frequency capability of the BFP 81?
The transistor is valid up to a transition frequency of 6 GHz.
What is the maximum collector‑emitter voltage for the Siemens BFP 81?
The BFP 81 can withstand up to 16 V (VCEO) and 25 V (VCES) between collector and emitter.
What is the package type of the BFP 81 transistor?
The transistor is supplied in a SOT‑143 surface‑mount package.