BFP 81 NPN Silicon RF Transistor is a low-noise amplifier from Dinghao that is suitable for collector currents from 0.5 mA to 20 mA.
The BFP 81 is an NPN silicon RF transistor designed for low‑noise amplifiers up to 2 GHz, handling collector currents from 0.5 mA to 20 mA. It is supplied in a SOT‑143 package and includes detailed DC and AC performance data.
The document lists maximum voltage and current ratings, thermal limits, and a complete set of SPICE model parameters (IS, BF, NF, etc.) for circuit simulation. Additional information such as transition frequency ranges and power gain curves are also provided.
| Collector‑emitter voltage (VCEO) | 16 V |
|---|---|
| Collector‑emitter voltage (VCES) | 25 V |
| Collector‑base voltage (VCBO) | 25 V |
| Emitter‑base voltage (VEB) | 2 V |
| Maximum collector current (IC) | 30 mA |
| Package type | SOT‑143 |
| Transition frequency | up to 2 GHz |
The BFP 81 can withstand up to 16 V (VCEO) and 25 V (VCES) between collector and emitter.
The transistor is supplied in a SOT‑143 surface‑mount package.
The datasheet lists parameters such as IS = 17.03 fA, BF = 110, NF = 0.80846, among many others for simulation.
The device is suitable for frequencies up to 2 GHz, with measured performance from 500 MHz to 2.2 GHz.