Key facts
- Brand
- Siemens
- Model
- BFP 490
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-05
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Siemens BFP 490 Semiconductor Transistor Datasheet
The BFP 490 is an NPN silicon RF transistor designed for high‑power amplifier applications. It features a gold‑metalized grounded‑emitter structure for high reliability and delivers a compression point of 26.5 dBm at 1.8 GHz with a gain of 9.5 dB.
The document lists the device's maximum ratings, DC and AC electrical characteristics, S‑parameter measurements, SPICE model parameters, and graphs of power dissipation, gain and noise figure. It also includes guidelines for non‑linear simulation and pulse‑load handling.
Siemens BFP 490 specifications
| Collector‑emitter voltage (VCEO) | 4.5 V |
|---|---|
| Collector current (IC) max | 600 mA |
| Transition frequency (fT) | > 17 GHz |
| Gain (Gma) at 1.8 GHz | 9.5 dB |
All Siemens BFP 490 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑emitter voltage of the BFP 490?
The maximum collector‑emitter voltage is 4.5 V.
What transition frequency does the BFP 490 support?
The transistor has a transition frequency greater than 17 GHz.
What is the maximum collector‑emitter voltage for the BFP 490?
The maximum collector‑emitter voltage is 4.5 V.
What is the transition frequency of the BFP 490 transistor?
The transition frequency is greater than 17 GHz.