Key facts
- Brand
- Siemens
- Model
- BTS 949
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-05
Start here
Siemens BTS 949 Smart Lowside Power Switch Datasheet
The BTS 949 is a N‑channel vertical power FET in Smart SIPMOs® chip‑on‑chip technology. It integrates multiple protection features such as ESD, thermal shutdown, overload, short‑circuit, over‑voltage and current limiting, and provides status feedback via an external resistor. The device is designed for 12 V and 24 V DC applications, replacing electromechanical relays and discrete circuits for resistive, inductive and capacitive loads.
The datasheet lists maximum ratings, electrical characteristics, dynamic switching parameters, and package dimensions. It also includes ordering codes, thermal resistance values, and typical transfer curves, enabling designers to evaluate the component for power‑switching applications.
Siemens BTS 949 specifications
| Drain‑source voltage (Vds) | 60 V |
|---|---|
| Nominal load current (Id) | 19 A |
| On‑state resistance (Rds(on)) typical | 0.18 mΩ |
| Maximum power dissipation | 240 W |
| Unclamped single pulse inductive energy | 6000 mJ |
| Thermal resistance (junction‑case) | 0.7 K/W |
Source: Siemens BTS 949 Smart Lowside Power Switch Datasheet
All Siemens BTS 949 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage rating?
The device can withstand up to 60 V between drain and source.
What is the nominal load current for the BTS 949?
The nominal load current is specified as 19 A.
What is the maximum drain‑source voltage of the BTS 949?
The maximum drain‑source voltage is 60 V.
What is the nominal load current rating?
The device can handle a nominal load current of 19 A.