This document describes the features of BFP 81 NPN Silicon RF Transistor, which is suitable for low-noise amplifiers with collector currents ranging from 0.5 mA to 20 mA and a frequency range of up to 2 GHz.
The BFP 81 is an NPN silicon RF transistor designed for low‑noise amplifiers up to 2 GHz, handling collector currents from 0.5 mA to 20 mA. It is supplied in a SOT‑143 package and includes detailed handling precautions for electrostatic discharge.
The document lists maximum ratings such as a 16 V collector‑emitter voltage and 30 mA collector current, as well as AC characteristics like a transition frequency up to 6 GHz. SPICE model parameters and the equivalent circuit are provided for simulation and design work.
| Collector‑emitter voltage (VCEO) | 16 V |
|---|---|
| Collector current (Ic) | 30 mA |
| Junction temperature (Tj) | 150 °C |
| Transition frequency (fT) | up to 6 GHz |
The maximum collector‑emitter voltage is 16 V.
The transistor is valid up to a transition frequency of 6 GHz.
The IS parameter is 17.03 fA.