The BFP 490 is a NPN silicon RF transistor manufactured by Texas Instruments. Its features are compression point P-1dB of 26.5 dBm, maximum available gain Gma of 9.5 dB and transition frequency fT over 17 GHz. The gold metallization ensures high reliability.
The BFP 490 is an NPN silicon RF transistor designed for high‑power amplifier applications. It offers a compression point of 26.5 dBm at 1.8 GHz and a transition frequency above 17 GHz, with gold metalisation for reliability.
The document lists detailed maximum ratings, DC and AC electrical characteristics, S‑parameters, and SPICE model data. It also includes package equivalent circuit information and guidelines for simulation at various frequencies.
| Collector‑emitter voltage (VCEO) | 4.5 V |
|---|---|
| Collector current (Ic) | 600 mA |
| Transition frequency (ft) | > 17 GHz |
| Maximum gain | 9.5 dB at 1.8 GHz |
| Total power dissipation | 1000 mW |
The maximum collector‑emitter voltage is 4.5 V.
The transition frequency is greater than 17 GHz.
The transistor provides a gain of 9.5 dB at 1.8 GHz.
The datasheet lists a complete Gummel‑Poon model in Berkeley‑SPICE 2G.6 syntax, including IS, BF, NF, VAF, IKF, and many other parameters.