BFP 490 is a NPN silicon RF transistor produced by Siemens Germany. It is mainly used in high power amplifiers, with a compression point of P-1dB of 26.5 dBm, a maximum gain of 9.5 dB, and a transition frequency of fT of 17 GHz.
The BFP 490 is an NPN silicon RF transistor designed for high‑power amplifier applications. It features a gold‑metalized grounded‑emitter structure for high reliability and delivers a compression point of 26.5 dBm at 1.8 GHz with a gain of 9.5 dB.
The document lists the device's maximum ratings, DC and AC electrical characteristics, S‑parameter measurements, SPICE model parameters, and graphs of power dissipation, gain and noise figure. It also includes guidelines for non‑linear simulation and pulse‑load handling.
| Collector‑emitter voltage (VCEO) | 4.5 V |
|---|---|
| Collector current (IC) max | 600 mA |
| Transition frequency (fT) | > 17 GHz |
| Gain (Gma) at 1.8 GHz | 9.5 dB |
The maximum collector‑emitter voltage is 4.5 V.
The transistor has a transition frequency greater than 17 GHz.
The typical gain is 9.5 dB at 1.8 GHz.
The device can handle up to 600 mA of collector current.