The MGFS48V2527 is a 60W push-pull type GaAs Power FET from Mitsubishi, mainly used in 2.5-2.7GHz band power amplifiers. It has the characteristics of high output power, high power gain and high power added efficiency.
The MGFS48V2527 is a GaAs power FET from Mitsubishi Semiconductor, designed for push‑pull 2.5‑2.7 GHz band amplifiers delivering up to 60 W output.
The datasheet provides electrical characteristics, recommended bias conditions, S‑parameter data and safety guidelines for reliable integration.
| Frequency band | 2.5 - 2.7 GHz |
|---|---|
| Typical output power | 60 W (typ.) at 2.5‑2.7 GHz |
| Typical gain | 10 dB (typ.) |
| Typical power added efficiency | 45 % (typ.) |
| Recommended VDS | 12 V |
| Recommended gate resistance | 20 Ω per gate |
| Thermal resistance (channel‑to‑case) | 1.0 °C·W⁻¹ (typ.) |
| Storage temperature range | -65 °C to +175 °C |
The MGFS48V2527 delivers a typical output power of 60 W at 2.5‑2.7 GHz.
Recommended bias is VDS = 12 V, ID = 4.0 A, with a gate resistance of 20 Ω per gate.
It is designed for the 2.5‑2.7 GHz band.