MGFS48V2527 is a 60W GaAs power FET from Mitsubishi Electric with a power gain of 10dB for use in 2.5-2.7GHz band power amplifiers.
The MGFS48V2527 GaAs FET from Mitsubishi Electric is a push‑pull type device intended for use in 2.5‑2.7 GHz band power amplifiers. It features a hermetically sealed metal‑ceramic package for high reliability and provides typical output power around 48 dBm (60 W) with a linear gain of about 10 dB.
Key electrical characteristics include a recommended drain‑source voltage of 12 V, drain current of 4.0 A, power added efficiency of 45 % typical, and a total power dissipation rating of 107.1 W. The datasheet also supplies S‑parameter data, IMD performance, and safety design recommendations.
| Frequency band | 2.5‑2.7 GHz |
|---|---|
| Typical output power (P2dB) | 48 dBm |
| Power added efficiency (P.A.E.) | 45 % |
| Gate‑to‑drain voltage (VGD) | -20 V |
| Total power dissipation (PT) | 107.1 W |
| Recommended VDS | 12 V |
It is designed for the 2.5‑2.7 GHz band.
The typical power added efficiency is 45 %.
The recommended drain‑source voltage is 12 V and the drain current is 4.0 A.