The MGFC45V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC45V5964A is an internally impedance‑matched GaAs power FET designed for 5.9 – 6.4 GHz band amplifiers. It is housed in a hermetically sealed metal‑ceramic package and provides typical 32 W output power, 9 dB linear gain and 33 % power‑added efficiency.
Mitsubishi Electric emphasizes safety, advising designers to keep safety first, use non‑flammable materials and follow the recommended bias conditions (VDS = 10 V, ID = 8 A, RG = 25 Ω). The datasheet also lists absolute maximum ratings, electrical characteristics and S‑parameter data.
| Frequency band | 5.9 – 6.4 GHz |
|---|---|
| Typical output power | 32 W |
| Linear Power Gain (GLP) | 9.0 dB |
| Power Added Efficiency (PAE) | 33 % |
| Third‑order intermodulation (IM3) | -45 dBc |
| Maximum drain current | 25 A |
| Gate‑to‑drain breakdown voltage | 15 V |
| Gate‑to‑source breakdown voltage | -45 V |
| Total power dissipation | 150 W |
| Storage temperature range | -65 °C to +175 °C |
The device delivers a typical output power of 32 W at 5.9 – 6.4 GHz.
Recommended bias is VDS = 10 V, ID = 8 A with a gate resistance of 25 Ω.
The maximum rated drain current is 25 A.
Designers should keep safety first, use non‑flammable materials and ensure proper placement of auxiliary circuits.