The document describes the features and characteristics of the MGFC36V4450A GaAs FET model produced by MITSUBISHI SEMICONDUCTOR. This GaAs FET features a high output power of up to 4W, a power gain of 12dB, a power added efficiency of 32%, and low distortion. The product is suitable for power amplifiers and digital wireless communication applications in the 4.4~5.0 GHz frequency band.
The MGFC36V4450A is a GaAs power FET from Mitsubishi Semiconductor, internally impedance‑matched to a 50 Ω system and intended for 4.4‑5.0 GHz band power amplifiers. Its hermetically sealed metal‑ceramic package provides high reliability and the device offers 4 W output power with a typical linear gain of 12 dB.
The datasheet also lists recommended bias conditions (VDS = 10 V, ID = 1.2 A, RG = 100 Ω) and absolute maximum ratings such as VGDO = ‑15 V, VGSO = 15 V, and a total power dissipation of 25 W. Safety and usage notes advise careful design to avoid breakdowns and to consider application‑specific reliability requirements.
| Frequency band | 4.4 ~ 5.0 GHz |
|---|---|
| Output power (P1dB) | 4 W (typ.) |
| Power added efficiency (P.A.E.) | 32 % (typ.) |
| Linear power gain (GLP) | 12 dB (typ.) |
| Gate‑to‑drain voltage (VGDO) | -15 V |
| Storage temperature | -65 °C / +175 °C |
The typical power added efficiency is 32 % at 4.4‑5.0 GHz.