The MGFC36V4450A is a GaAs power FET specially designed by Toshiba for use in 4.4-5.0GHz band amplifiers. The product has high output power, high gain, high power added efficiency and low distortion.
The MGFC36V4450A is an internally impedance‑matched GaAs power FET designed for 4.4‑5.0 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability and offers Class A operation with high output power.
The document includes electrical characteristics, recommended bias conditions, absolute maximum ratings, and safety notices. Mitsubishi Electric emphasizes careful circuit design and compliance with export controls.
| Frequency band | 4.4‑5.0 GHz |
|---|---|
| Typical output power | 4 W |
| Class of operation | Class A |
| Typical power added efficiency (PAE) | 32 % (typ.) |
| Maximum drain current (ID) | 3.75 A |
| Gate‑to‑drain breakdown voltage (VGDO) | -15 V |
| Gate‑to‑source breakdown voltage (VGSO) | -15 V |
| Total power dissipation (PT) | 25 W |
| Storage temperature range | -65 °C to +175 °C |
The maximum drain current is 3.75 A.
Typical PAE is 32 % at 4.4‑5.0 GHz.
It can be stored from –65 °C to +175 °C.