Key facts
- Brand
- Siemens
- Model
- BJL-50
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-07
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SIEMENS HYB 514256B/BJ-50/-60/-70 256 K × 4-Bit Dynamic RAM HYB 514256BL/BJL-50/-60/-70 Low Power 256 K × 4-Bit Dynamic RAM(1)
The Siemens HYB 514256B/BJ/BL/BJL is a new generation dynamic RAM organized as 262,144 words by 4-bit. It utilizes CMOS silicon gate process technology to provide wide operating margins and high system bit densities. The device supports single +5 V power supply operation and features fast access times ranging from 50 ns to 70 ns depending on the version.
Read onlineSiemens BJL-50 specifications
| Organization | 262 144 words by 4-bit |
|---|---|
| Supply Voltage | +5 V (+ 10%) |
| Access Time (-50 version) | 50 ns |
| Cycle Time (-50 version) | 95 ns |
All Siemens BJL-50 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
Is this memory suitable for battery backup applications?
Yes, the HYB 514256BL/BJL versions are specially selected for battery backup applications.
How much power does the -50 version consume during standby?
The maximum standby power dissipation is 5.5 mW for standard versions and 1.1 mW for L-versions.
What is the refresh cycle time for this DRAM?
The device supports a refresh period of 8 ms or 64 ms depending on the configuration.
Is this memory suitable for battery backup applications?
Yes, the HYB 514256BL/BJL variants are specially selected for battery backup applications.