The HITFET BTS 949 is a smart low side power switch. It features logic level input, input protection, thermal shutdown, overload protection, short circuit protection, overvoltage protection, current limitation. Maximum current can be adjusted with external resistor. It supports current sense and status feedback. Analog driving is possible.
The BTS 949 is a N‑channel vertical power FET in Smart SIPMOs® chip‑on‑chip technology. It integrates multiple protection features such as ESD, thermal shutdown, overload, short‑circuit, over‑voltage and current limiting, and provides status feedback via an external resistor. The device is designed for 12 V and 24 V DC applications, replacing electromechanical relays and discrete circuits for resistive, inductive and capacitive loads.
The datasheet lists maximum ratings, electrical characteristics, dynamic switching parameters, and package dimensions. It also includes ordering codes, thermal resistance values, and typical transfer curves, enabling designers to evaluate the component for power‑switching applications.
| Drain‑source voltage (Vds) | 60 V |
|---|---|
| Nominal load current (Id) | 19 A |
| On‑state resistance (Rds(on)) typical | 0.18 mΩ |
| Maximum power dissipation | 240 W |
| Unclamped single pulse inductive energy | 6000 mJ |
| Thermal resistance (junction‑case) | 0.7 K/W |
The device can withstand up to 60 V between drain and source.
The nominal load current is specified as 19 A.
Typical on‑state resistance is about 0.18 mΩ.